DocumentCode
2517527
Title
Simulation of dynamic particle trajectories through resonant-tunneling structures based upon Wigner distribution function
Author
Tsuchiya, H. ; Miyoshi, T.
Author_Institution
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
156
Lastpage
159
Abstract
The dynamic particle trajectories of a resonant-tunneling structure at large bias conditions are investigated based upon the phase space description in the Wigner distribution function. The procedure for the Wigner trajectory calculation is presented in detail. We demonstrate the dynamic behaviors of the quantum tunneling trajectories and the steady-state tunneling times, corresponding with the transmission coefficient spectra and the classical particle trajectories. The Wigner trajectory technique presented in this paper can provide an instructive description of carrier nonequilibrium quantum transport distinct from the conventional carrier statistics such as carrier density and current density distributions. Thus, it will be available to understand the dynamic behaviors of various nanostructure devices.
Keywords
III-V semiconductors; Wigner distribution; aluminium compounds; gallium arsenide; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; Wigner distribution function; Wigner trajectory calculation; carrier nonequilibrium quantum transport; dynamic particle trajectories; nanostructure devices; phase space description; resonant-tunneling structures; steady-state tunneling times; transmission coefficient spectra; Boltzmann equation; Distributed computing; Distribution functions; Flowcharts; Magnetic fields; Particle scattering; Potential energy; Quantum computing; Resonant tunneling devices; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742735
Filename
742735
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