Title :
Simulations of Schottky barrier diodes and tunnel transistors
Author :
Matsuzawa, K. ; Uchida, K. ; Nishiyama, A.
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Yokohama, Japan
Abstract :
We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.
Keywords :
Schottky diodes; ohmic contacts; semiconductor device models; semiconductor doping; thermionic emission; tunnel transistors; Schottky barrier diodes; doping level; ohmic contacts; short channel effect; spatially distributed tunneling; thermionic emission; tunnel transistors; Impurities; Laboratories; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling; Thermionic emission; Tunneling;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742737
