DocumentCode :
2517563
Title :
Small- and large-signal RF characterization of fully-depleted accumulation-mode varactors for low-voltage LC-VCO SOI design
Author :
Parvais, B. ; Delatte, P. ; Matsuhashi, H. ; Ichikawa, F. ; Simon, P. ; Schreurs, D. ; Flandre, D. ; Raskin, J.P.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Belgium
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
168
Lastpage :
170
Abstract :
This paper discusses on small- and large-signal RF characterization of fully-depleted accumulation-mode varactors for low-voltage LC-VCO SOI design. This work provides a complete analysis of the evolution of Kv between small- and large-signal regimes and its consequences to the VCO design. Furthermore, several SOI devices are investigated, showing the best performances of zero voltage accumulation-mode varactors.
Keywords :
elemental semiconductors; microwave oscillators; silicon-on-insulator; varactors; voltage-controlled oscillators; RF characterization; SOI devices; Si; fully depleted accumulation mode varactors; low voltage VCO SOI design; silicon-on-insulator; voltage controlled oscillators; zero voltage accumulation; Capacitance; Capacitance-voltage characteristics; Doping; Phase locked loops; Q factor; Radio frequency; Silicon; Varactors; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391602
Filename :
1391602
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517563
بازگشت