DocumentCode
2517577
Title
Fundamental operation and design considerations for metal-oxide tunnel transistors
Author
Buot, F.A. ; Rendell, R.W. ; Snow, E.S. ; Campbell, P.M. ; Park, D. ; Marrian, C.R.K. ; Magno, R.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
166
Lastpage
169
Abstract
The ideal tunneling operation, materials, and geometrical design considerations for novel field-effect transistors which do not employ dopants of any kind are given. Nonideal effects on the performance, such as the effects of scattering and excess-space charge, are also simulated.
Keywords
insulated gate field effect transistors; semiconductor device models; tunnel transistors; excess-space charge; field-effect transistors; geometrical design; metal-oxide tunnel transistors; scattering; tunnel current; Dielectrics and electrical insulation; Impedance; Metal-insulator structures; Niobium; Particle scattering; Polarization; Snow; Space charge; Transconductance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742738
Filename
742738
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