Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

Author

Babiker, S. ; Asenov, A. ; Roy, S. ; Barker, J.R. ; Beaumont, S.P.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

178

Lastpage

181

Abstract

The impact of In/sub x/Al/sub 1-x/As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics.

Keywords

III-V semiconductors; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; In content; InGaAs-InAlAs; RF characteristics; breakdown characteristics; channel pHEMTs; strain control buffers; strain engineering; tensile strained channel devices; virtual substrates; Capacitive sensors; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; PHEMTs; Radio frequency; Strain control;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742741

Filename

742741