Title :
Effect of oxidation ambient on phosphorus diffusion in SOI
Author :
Uchida, H. ; Asai, H. ; Ieki, Y. ; Ichimura, Makoto ; Chunlin Shao ; Arai, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.
Keywords :
diffusion; doping profiles; elemental semiconductors; oxidation; phosphorus; point defects; secondary ion mass spectra; silicon; silicon-on-insulator; SIMS; SOI; Si:P; diffusion profiles; four point probe; oxidation ambient; phosphorus diffusion; point defect pair diffusion model; spreading resistance; Conductivity measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Nitrogen; Oxidation; Probes; Shape; Silicon on insulator technology; Strontium;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742745
