Title :
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
Author :
Sano, N. ; Fischetti, M.V. ; Laux, S.E.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; impact ionisation; indium compounds; pseudopotential methods; silicon; spin-orbit interactions; valence bands; GaAs; Ge; In/sub 0.53/Ga/sub 0.47/As; InAs; Si; ab-initio ionization transition rates; energy splitting; hole-initiated impact ionization; local pseudopotentials; nonlocal pseudopotentials; spin-orbit interaction; split-off band; valence band; Data mining; Dielectrics; Ducts; Gallium arsenide; Impact ionization; Indium gallium arsenide; Lattices; Orbital calculations; Photonic band gap; Physics;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742746
