DocumentCode
2517733
Title
Transient analysis of impact ionization anisotropy using realistic band structure for GaAs
Author
Jung, H.K. ; Nakano, H. ; Taniguchi, K.
Author_Institution
Dept. of Electron. Eng., Kunsan Nat. Univ., Chonbuk, South Korea
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
202
Lastpage
205
Abstract
We have investigated anisotropic properties for impact ionisation of GaAs using Monte Carlo simulation and a realistic energy band structure. The realistic energy band structure is derived from the empirical pseudopotential method and impact ionisation scattering rates are calculated by Fermi´s golden rule. For observing anisotropic properties of impact ionisation coefficients, a Monte Carlo simulation has been performed after electric fields are applied along different directions.
Keywords
III-V semiconductors; Monte Carlo methods; band structure; gallium arsenide; impact ionisation; pseudopotential methods; Fermi´s golden rule; GaAs; Monte Carlo simulation; band structure; empirical pseudopotential method; impact ionization anisotropy; scattering rates; transient analysis; Anisotropic magnetoresistance; Circuits; Electrons; Gallium arsenide; Hot carriers; Impact ionization; Information systems; Radio frequency; Scattering; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742747
Filename
742747
Link To Document