Title :
Full/partial depletion effects in FinFETs
Author :
Xiong, W. ; Cleavelin, C. Rinn ; Wise, Rick ; Yu, Shaofeng ; Pas, Michael ; Zaman, R.J. ; Gostkowski, Michael ; Matthews, Kenneth ; Maleville, C. ; Patruno, Paul ; King, Tsu-Jae ; Colinge, J.P.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias.
Keywords :
field effect transistors; lithography; masks; semiconductor device models; depletion effects; gate induced floating body effect; n-channel FinFET; negative back gate bias; partially depleted devices; Doping; FinFETs; Hafnium; Impurities; Lithography; MOSFETs; Oxidation; Silicon; Transconductance; Voltage;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391613
