• DocumentCode
    2517734
  • Title

    Full/partial depletion effects in FinFETs

  • Author

    Xiong, W. ; Cleavelin, C. Rinn ; Wise, Rick ; Yu, Shaofeng ; Pas, Michael ; Zaman, R.J. ; Gostkowski, Michael ; Matthews, Kenneth ; Maleville, C. ; Patruno, Paul ; King, Tsu-Jae ; Colinge, J.P.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    195
  • Lastpage
    197
  • Abstract
    Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias.
  • Keywords
    field effect transistors; lithography; masks; semiconductor device models; depletion effects; gate induced floating body effect; n-channel FinFET; negative back gate bias; partially depleted devices; Doping; FinFETs; Hafnium; Impurities; Lithography; MOSFETs; Oxidation; Silicon; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391613
  • Filename
    1391613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517734