Title :
Numerical simulation of semiconductor devices: energy-transport and quantum hydrodynamic modeling
Author :
Jungel, Ansgar ; Pohl, C.
Author_Institution :
Fachbereich Math., Tech. Univ. Berlin, Germany
Abstract :
In this paper, the authors discuss two modern semiconductor models: the energy-transport and the quantum hydrodynamic equations. The energy-transport models consist of the conservation laws for mass and energy for the electrons, coupled self-consistently to the Poisson equation. The quantum hydrodynamic equations consist of the conservation laws for mass, momentum and energy, including the Poisson equation.
Keywords :
Poisson equation; quantum theory; semiconductor device models; Poisson equation; conservation laws; energy; energy-transport modeling; mass; momentum; numerical simulation; quantum hydrodynamic equations; quantum hydrodynamic modeling; self-consistent equations; semiconductor devices; semiconductor models; Boltzmann equation; Current density; Electrons; Hydrodynamics; Numerical simulation; Poisson equations; Semiconductor devices; Semiconductor diodes; Temperature; Tunneling;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742753
