DocumentCode
2517842
Title
Numerical simulation of semiconductor devices: energy-transport and quantum hydrodynamic modeling
Author
Jungel, Ansgar ; Pohl, C.
Author_Institution
Fachbereich Math., Tech. Univ. Berlin, Germany
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
230
Lastpage
233
Abstract
In this paper, the authors discuss two modern semiconductor models: the energy-transport and the quantum hydrodynamic equations. The energy-transport models consist of the conservation laws for mass and energy for the electrons, coupled self-consistently to the Poisson equation. The quantum hydrodynamic equations consist of the conservation laws for mass, momentum and energy, including the Poisson equation.
Keywords
Poisson equation; quantum theory; semiconductor device models; Poisson equation; conservation laws; energy; energy-transport modeling; mass; momentum; numerical simulation; quantum hydrodynamic equations; quantum hydrodynamic modeling; self-consistent equations; semiconductor devices; semiconductor models; Boltzmann equation; Current density; Electrons; Hydrodynamics; Numerical simulation; Poisson equations; Semiconductor devices; Semiconductor diodes; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742753
Filename
742753
Link To Document