Title :
New insights on the hot-carrier characteristics of 55 nm PD SOI MOSFETs
Author :
Ioannou, Dimitris P. ; Zhao, E. ; Cooper, S. ; Zhang, J. ; Jayanarayanan, S.K. ; Pham, V. ; Marathe, A. ; Ioannou, Dimitris E.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
We report hot-carrier degradation results for a 90 nm technology (Lpoly = 55 nm) partially depleted (PD) SOI MOSFETs with electrical gate oxide thickness (Inversion mode) down to 19.5 Å. In addition, this work investigates the effect of time dependent dielectric breakdown (TDDB) pre-stressing on the hot carrier behavior of these devices.
Keywords :
MOSFET; elemental semiconductors; hot carriers; semiconductor device breakdown; silicon-on-insulator; 55 nm; 90 nm; Si; TDDB; electrical gate oxide thickness; hot carrier degradation; metal-oxide semiconductor field effect transistor; partially depleted SOI MOSFET; silicon-on-insulator; time dependent dielectric breakdown prestressing; Dielectric breakdown; Hot carriers; Human computer interaction; MOS devices; MOSFETs; Random access memory; Temperature dependence; Thermal conductivity; Thermal degradation; Voltage;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391618
