Title :
Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: simulation and experiments
Author :
Suemitsu, Tetsuya ; Tomizawa, Masaaki ; Enoki, Takatomo ; Ishii, Yasunobu
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
The correlation among the impact ionization, the surface traps, and the drain current degradation (kink) has been studied. The two-dimensional device simulation reveals that the increase in the surface traps at the recess region between gate and drain causes an enhancement of the weak impact ionization at low biases. This is one of the possible reasons for the kink phenomenon associated with hot-electron-induced degradation.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; indium compounds; semiconductor device models; surface states; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; drain; drain current degradation; gate; hot-electron-induced degradation; impact ionization; kink; low bias; simulation; surface traps; two-dimensional device simulation; weak impact ionization; Charge carrier processes; Electrodes; Electron traps; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Voltage;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742758
