Title :
Low Temperature Copper-Copper Thermocompression Bonding
Author :
Ang, X.F. ; Lin, A.T. ; Wei, J. ; Chen, Z. ; Wong, C.C.
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Successful direct copper thermocompression bonding was demonstrated at room temperature under ambient environment, yielding shear strength of 21 MPa. Studies on the effect of bonding temperature on the copper joint shear strength revealed a unique phenomenon at the low temperature regime (~80degC -140degC) whereby bond integrity degrades with increasing temperature. Beyond 140degC, direct relationship between temperature and joint shear strength was observed. A hypothesis on the bonding mechanism between copper surfaces is proposed to explain the anomalous bonding behaviour with temperature.
Keywords :
bonding processes; copper; integrated circuit bonding; shear strength; Cu-Cu; anomalous bonding behaviour; bonding temperature; copper joint shear strength; copper-copper thermocompression bonding; room temperature; shear strength; temperature 293 K to 298 K; temperature 80 degC to 140 degC; Bonding processes; Conducting materials; Copper; Diffusion bonding; Materials science and technology; Surface cleaning; Surface morphology; Temperature; Thermal stresses; Wafer bonding;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763467
