Low Temperature Copper-Copper Thermocompression Bonding

Author

Ang, X.F. ; Lin, A.T. ; Wei, J. ; Chen, Z. ; Wong, C.C.

Author_Institution

Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2008

fDate

9-12 Dec. 2008

Firstpage

399

Lastpage

404

Abstract

Successful direct copper thermocompression bonding was demonstrated at room temperature under ambient environment, yielding shear strength of 21 MPa. Studies on the effect of bonding temperature on the copper joint shear strength revealed a unique phenomenon at the low temperature regime (~80degC -140degC) whereby bond integrity degrades with increasing temperature. Beyond 140degC, direct relationship between temperature and joint shear strength was observed. A hypothesis on the bonding mechanism between copper surfaces is proposed to explain the anomalous bonding behaviour with temperature.

Keywords

bonding processes; copper; integrated circuit bonding; shear strength; Cu-Cu; anomalous bonding behaviour; bonding temperature; copper joint shear strength; copper-copper thermocompression bonding; room temperature; shear strength; temperature 293 K to 298 K; temperature 80 degC to 140 degC; Bonding processes; Conducting materials; Copper; Diffusion bonding; Materials science and technology; Surface cleaning; Surface morphology; Temperature; Thermal stresses; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th

Conference_Location

Singapore

Print_ISBN

978-1-4244-2117-6

Electronic_ISBN

978-1-4244-2118-3

Type

conf

DOI

10.1109/EPTC.2008.4763467

Filename

4763467