• DocumentCode
    2518328
  • Title

    Theoretical study of electronic properties of Zn1−x(TM)xO (TM=Mg,Cd)

  • Author

    Peng, Chen ; Hui-Qing, Sun ; Li-ping, Kong

  • Author_Institution
    Inst. of Opto-Electron. Mater. & Technol., South Normal Univ., Guangzhou, China
  • fYear
    2010
  • fDate
    3-6 Dec. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The paper present study of the electronic and optical properties of Zn1-x(TM)x (TM=Mg,Cd), through density function theory (DFT) based on first-principles method. The calculation indicate that the band gap of Zn1-xCdxO narrows as result of the increasing concentrations of Cd. The paper shows that the Zn 4s and Cd 5s electron states broadens to low energy states and that the O2p electron states broadens to high energy states with increasing Cd-doping concentrations. The paper advances a possible theoretical mechanism of Cd-doped regulating Bands gap. Optical property of Zn1-x(TM)x (TM=Mg,Cd) is presented in the paper.
  • Keywords
    II-VI semiconductors; cadmium compounds; density functional theory; doping profiles; magnesium compounds; zinc compounds; DFT; ZnCdO; ZnMgO; band gap; density function theory; doping concentrations; first-principles method; Electron optics; Lattices; Materials; Photonic band gap; Zinc oxide; ZnO; band gap; electronic structure; optical property;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4244-8393-8
  • Electronic_ISBN
    978-1-4244-8392-1
  • Type

    conf

  • DOI
    10.1109/AOM.2010.5713513
  • Filename
    5713513