DocumentCode
2518328
Title
Theoretical study of electronic properties of Zn1−x(TM)xO (TM=Mg,Cd)
Author
Peng, Chen ; Hui-Qing, Sun ; Li-ping, Kong
Author_Institution
Inst. of Opto-Electron. Mater. & Technol., South Normal Univ., Guangzhou, China
fYear
2010
fDate
3-6 Dec. 2010
Firstpage
1
Lastpage
5
Abstract
The paper present study of the electronic and optical properties of Zn1-x(TM)x (TM=Mg,Cd), through density function theory (DFT) based on first-principles method. The calculation indicate that the band gap of Zn1-xCdxO narrows as result of the increasing concentrations of Cd. The paper shows that the Zn 4s and Cd 5s electron states broadens to low energy states and that the O2p electron states broadens to high energy states with increasing Cd-doping concentrations. The paper advances a possible theoretical mechanism of Cd-doped regulating Bands gap. Optical property of Zn1-x(TM)x (TM=Mg,Cd) is presented in the paper.
Keywords
II-VI semiconductors; cadmium compounds; density functional theory; doping profiles; magnesium compounds; zinc compounds; DFT; ZnCdO; ZnMgO; band gap; density function theory; doping concentrations; first-principles method; Electron optics; Lattices; Materials; Photonic band gap; Zinc oxide; ZnO; band gap; electronic structure; optical property;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-8393-8
Electronic_ISBN
978-1-4244-8392-1
Type
conf
DOI
10.1109/AOM.2010.5713513
Filename
5713513
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