The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED

Author

Luo, Shaojun ; Deng, Jun ; Li, Jianjun ; Gao, Linchun ; Chen, Rui ; Han, Jun

Author_Institution

Key Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

3-6 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system´s growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics of the LED changed with the growth temperature of GaP layers. This experience can be used for the fabrication of high-performance AlGaInP red LED.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; doping profiles; gallium compounds; indium compounds; light emitting diodes; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaInP:GaP-P; ECV system; doping density; epitaxial grown; growth temperature; low pressure metal organic chemical vapor deposition; red LED; Doping; Light emitting diodes; Ohmic contacts; Substrates; Surface morphology; Temperature distribution; ECV; LED; MOCVD; P-GaP;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8392-1

Type

conf

DOI

10.1109/AOM.2010.5713514

Filename

5713514