Scanning tunneling microscopy on cleaved silicon pn junctions

Author

Kordic, S. ; van Loenen, E.J. ; Dijkkamp, D. ; Hoeven, A.J. ; Moraal, H.K.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

277

Lastpage

280

Abstract

A scanning tunneling microscope (STM) was used in air on cleaved Si pn junctions for junction delineation. Two-dimensional STM scans of a 0.3- mu m-deep pn junction localized the junction position to within 50 nm. One-dimensional scans of the same junction have a resolution of 7 nm. A dependence of the tunneling current on the local impurity concentration of the sample is also observed. The minimum detectable impurity concentration is below 10/sup 15/ cm/sup -3/.<>

Keywords

doping profiles; elemental semiconductors; p-n homojunctions; scanning tunnelling microscopy; silicon; 0.3 micron; 1D STM; 2D STM; STM; cleaved Si pn junctions; junction delineation; local impurity concentration; minimum detectable impurity concentration; resolution; scanning tunneling microscope; scanning tunneling microscopy; tunneling current; used in air; Atomic force microscopy; Atomic measurements; Electrical resistance measurement; Force measurement; Impurities; Laboratories; Silicon; Spatial resolution; Surface topography; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74278

Filename

74278