Title :
Analysis of latchup-induced photoemission
Author :
Aoki, Takahiro ; Yoshii, Akira
Author_Institution :
NTT, Kanagawa, Japan
Abstract :
Latchup-induced photoemission from CMOS devices is studied in comparison with photoemission from hot carriers. Experiments showed that they are essentially different in spectrum characteristics. By making good use of this difference, the latchup site can be identified with high resolution. An effective method for detecting latchup sites is demonstrated involving the comparison of the photoemission patterns using bandpass interference filters that are either transparent or not transparent to the latchup photoemission. In addition, the photoemission mechanism from latchup, which is a phonon-assisted electron-hole recombination, is clarified.<>
Keywords :
CMOS integrated circuits; electron-hole recombination; integrated circuit testing; light emitting devices; photoemission; CMOS devices; bandpass interference filters; detecting latchup sites; high resolution; latchup site; latchup-induced photoemission; light emission; phonon-assisted electron-hole recombination; photoemission mechanism from latchup; photoemission patterns; spectrum characteristics; Band pass filters; Electron emission; Image intensifiers; Optical filters; Optical microscopy; Photoelectricity; Photonic integrated circuits; Spontaneous emission; Stimulated emission; Temperature;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74279
