• DocumentCode
    2518570
  • Title

    The effects of different coverage of Nitrogen adsorbed on wurtzite ZnO(0001) surface

  • Author

    Cao, Dong-Xing ; Guo, Zhi-You ; Gao, Xiao-Qi ; Zhang, Yu-Fei ; Ye, Guo-Guang

  • Author_Institution
    Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
  • fYear
    2010
  • fDate
    3-6 Dec. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The adsorption of nitrogen on wurtzite ZnO (0001) surface were studied by First-principles. Different adsorption sites and the effect of different coverages have been considered. The clean ZnO (0001) surface and different coverages of Nitrogen adsorbed on wurtzite ZnO(0001) surface show n-type conduction. We found that the H3 adsorption site is energy-favored in each coverage considered, and that 0.25 and 0.5ML N adsorption leads to an indirect band gap semiconducting surface. Analyzing the electronic structures and the density of states of the adsorbed systems, we proposed that the strong hybridization between the Zn-3d and N-2p results in the consequent saturation of Zn dangling bonds and the formation of a polarized covalent Zn-N bonding. Our study may be able to provide a guidance for the growth of N-doped ZnO.
  • Keywords
    II-VI semiconductors; ab initio calculations; adsorption; dangling bonds; electrical conductivity; electronic density of states; energy gap; nitrogen; optical materials; semiconductor doping; surface states; wide band gap semiconductors; zinc compounds; N2; ZnO; adsorption; dangling bonds; density of states; doping; electronic structure; first-principle method; indirect band gap semiconducting surface; n-type conduction; nitrogen; wurtzite structure; Crystals; Nitrogen; Photonic band gap; Surface cleaning; Zinc oxide; ZnO (0001) surface; adsorption energy; electronic structure; nitrogen adsorption;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4244-8393-8
  • Electronic_ISBN
    978-1-4244-8392-1
  • Type

    conf

  • DOI
    10.1109/AOM.2010.5713528
  • Filename
    5713528