DocumentCode :
2518583
Title :
Some methods to make high quality GaN film by MOCVD
Author :
Guorui, Liu ; Xiaoyun, Li
Author_Institution :
Coll. of Inf. & Comminication Eng., Tianjin Polytech. Univ., Tianjin, China
fYear :
2010
fDate :
3-6 Dec. 2010
Firstpage :
1
Lastpage :
3
Abstract :
Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base on the order of process, hope to improve the quality of MOCVD GaN films by improve the process.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; semiconductor growth; semiconductor thin films; wide band gap semiconductors; Al2O3; GaN; MOCVD; gallium nitride films; high quality film growth; metal-organic chemical vapor deposition; sapphire; Buffer layers; Epitaxial growth; Gallium nitride; Lattices; MOCVD; Substrates; GaN; MOCVD; buffer layer; process; sapphire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
Type :
conf
DOI :
10.1109/AOM.2010.5713529
Filename :
5713529
Link To Document :
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