DocumentCode
2518583
Title
Some methods to make high quality GaN film by MOCVD
Author
Guorui, Liu ; Xiaoyun, Li
Author_Institution
Coll. of Inf. & Comminication Eng., Tianjin Polytech. Univ., Tianjin, China
fYear
2010
fDate
3-6 Dec. 2010
Firstpage
1
Lastpage
3
Abstract
Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base on the order of process, hope to improve the quality of MOCVD GaN films by improve the process.
Keywords
III-V semiconductors; MOCVD; gallium compounds; semiconductor growth; semiconductor thin films; wide band gap semiconductors; Al2O3; GaN; MOCVD; gallium nitride films; high quality film growth; metal-organic chemical vapor deposition; sapphire; Buffer layers; Epitaxial growth; Gallium nitride; Lattices; MOCVD; Substrates; GaN; MOCVD; buffer layer; process; sapphire;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-8393-8
Electronic_ISBN
978-1-4244-8392-1
Type
conf
DOI
10.1109/AOM.2010.5713529
Filename
5713529
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