• DocumentCode
    2518583
  • Title

    Some methods to make high quality GaN film by MOCVD

  • Author

    Guorui, Liu ; Xiaoyun, Li

  • Author_Institution
    Coll. of Inf. & Comminication Eng., Tianjin Polytech. Univ., Tianjin, China
  • fYear
    2010
  • fDate
    3-6 Dec. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base on the order of process, hope to improve the quality of MOCVD GaN films by improve the process.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; semiconductor growth; semiconductor thin films; wide band gap semiconductors; Al2O3; GaN; MOCVD; gallium nitride films; high quality film growth; metal-organic chemical vapor deposition; sapphire; Buffer layers; Epitaxial growth; Gallium nitride; Lattices; MOCVD; Substrates; GaN; MOCVD; buffer layer; process; sapphire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4244-8393-8
  • Electronic_ISBN
    978-1-4244-8392-1
  • Type

    conf

  • DOI
    10.1109/AOM.2010.5713529
  • Filename
    5713529