Measurement and extraction for parameters fχ and γ of noise in bipolar transistors-Based on measuring the power spectral density of noise current

The main part of low-frequency noise in bipolar transistors is the 1/f noise. Its important parameters f_χ and γ are considered. A method of measurement and extraction for noise parameters f_χ and γ is presented. It is based on low-frequency current noise spectra measurement and on applying the weighted least square method. In the measurement system a fast Fourier transform analyzer is used to measure noise power spectra, and a scanning frequency sine signal method is used to measure the transfer function. Highly accurate results are obtained. An example and results are given