Theoretical investigation on influence of semiconductor substrate on transmission performance of epitaxially grown Fabry-Pérot filter

This paper investigates the influence of the GaAs substrate on the transmission performance of quarter-wave-stacks´ Distributed Brag Reflector (DBR)-based Fabry-Pérot (F-P) filter formed by heteroepitaxial growth, using Transfer Matrix Method (TMM) theoretically. According to our simulation, the designed resonant transmission peak of the filter deteriorates by splitting up with the substrate thickness increasing; furthermore, a rapid oscillation of the Peak-Transmittivity (P-T) of the filter along with the alteration of the substrate thickness is also gained. Finally, a conclusion is achieved that a relatively acceptable transmission spectrum of the filter of this kind can be obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.