• DocumentCode
    2518754
  • Title

    High efficiency single-doped white phosphorescent light-emitting diodes

  • Author

    Niu, Qiaoli ; Xu, Yunhua ; Peng, Junbiao ; Zhang, Yong

  • Author_Institution
    Dept. of Educ. of Guangdong Province, South China Normal Univ., Guangzhou, China
  • fYear
    2010
  • fDate
    3-6 Dec. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Efficient polymer white-light-emitting diodes (WPLEDs) have been fabricated with a single emissive layer, blue-green fluorescence polymer doped with a red phosphorescent dye. The device structure consists of ITO/poly(ehtlenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS)/poly(N-vinylcarbazole) (PVK) /poly(9,9-dioctylfluorene) (PFO): Ir-complex (Ir(DMFPQ)2pbm) /CsF/Al. Energy transfer occurred from PFO to Ir(DMFPQ)2pbm, leading to electroluminescence quench of PFO. Pure and efficient white light emission was realized by tuning the weight ratio of PFO:Ir(DMFPQ)2pbm to 99.7: 0.3. The maximum current efficiency and luminance of WPLEDs were 9.6cd/A at 7.8V and 13491cd/m2 at 11.4V, respectively.
  • Keywords
    aluminium; caesium compounds; doping; dyes; electroluminescence; fluorescence; indium compounds; optical polymers; organic light emitting diodes; phosphorescence; quenching (thermal); tin compounds; ITO-CsF-Al; Ir-complex; blue-green fluorescence polymer; current efficiency; device structure; electroluminescence quenching; emissive layer; energy transfer; high efficiency single-doped light-emitting diodes; phosphorescent dye; poly(9,9-dioctylfluorene); poly(N-vinylcarbazole); poly(ehtlenedioxythiophene)-poly(styrene sulfonic acid); polymer white-light-emitting diodes; voltage 11.4 V; voltage 7.8 V; weight ratio tuning; white light emission; white phosphorescent light-emitting diodes; Color; Energy exchange; Organic light emitting diodes; Polymers; Substrates; organic electroluminescence; phosphorescence; polymer light-emitting diode; white;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4244-8393-8
  • Electronic_ISBN
    978-1-4244-8392-1
  • Type

    conf

  • DOI
    10.1109/AOM.2010.5713539
  • Filename
    5713539