Title :
Optical loss of bandgap shifted InGaAsP/InP waveguide using argon plasma-enhanced quantum well intermixing
Author :
Zhang, Xin ; He, Jian-Jun
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss coefficient at the original band-edge was reduced from 373dB/cm to 68dB/cm, which is acceptable and utilizable for photonic integrated circuit application.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical losses; optical waveguides; semiconductor quantum wells; spectral line shift; sputter etching; wide band gap semiconductors; InGaAsP-InP; argon plasma-enhanced quantum well intermixing; bandgap shifted waveguide; blue shift; etch-stop layer; optical loss; photonic integrated circuit; quantum well structure; Argon; Indium phosphide; Loss measurement; Optical waveguides; Photonic band gap; Plasmas; Rapid thermal annealing; Optical waveguides; Quantum well intermixing (QWI); Semiconductor quantum wells;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713541
