• DocumentCode
    2518877
  • Title

    Electron transport features in two-barrier resonant-tunneling Si/CaF2 structures

  • Author

    Baranov, A.V. ; Velichko, A.A. ; Ilushin, V.A. ; Philimonova, N.I.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2002
  • fDate
    23-26 Sept. 2002
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    Along with superlattices an engineering and practical use of double-barrier resonant-tunneling Si/CaF2 structures is possible. The current-voltage characteristic (CVC) of such structures can have a specific features caused by several mechanisms of electron transport. In this paper we analyse some features of electron transport and CVC of double-barrier resonant-tunneling Si/CaF2 structures.
  • Keywords
    calcium compounds; elemental semiconductors; quantum wells; resonant tunnelling; semiconductor-insulator boundaries; silicon; Si-CaF2; Si/CaF2 double-barrier resonant tunneling structure; current-voltage characteristics; electron transport; low-dimensional quantum well structure; semiconductor-dielectric interface; Charge carrier processes; Dielectrics; Electron traps; Energy states; Molecular beam epitaxial growth; Nanoelectronics; Resonance; Resonant tunneling devices; Silicon; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
  • Print_ISBN
    0-7803-7361-8
  • Type

    conf

  • DOI
    10.1109/APEIE.2002.1075777
  • Filename
    1075777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2518877