Title :
Determination of carrier concentration and mobility in two-dimensional semiconductor systems and thin films using Shubnikov-de Haas and cyclotron resonance effects
Author :
Kornilovich, A.A.
Author_Institution :
State Tech. Univ., Novosibirsk, Russia
Abstract :
A new contactless microwave method to measure and calculate the transport parameters of semiconductor two-dimensional (2D) systems such as GaAs/AlxGa1-xAs heterostructures and thin films such as CdxHg1-xTe by using Shubnikov-de Haas and cyclotron resonance effects are presented. The relative measurements of the magnetic field dependences of the derivative of the reflection coefficient allows the carrier concentration, Hall-conductivity, carrier mobility and impulse relaxation time to be determined. A contactless test of 2D systems is proposed.
Keywords :
Hall effect; II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; carrier density; carrier mobility; cyclotron resonance; electric variables measurement; gallium arsenide; mercury compounds; microwave measurement; semiconductor heterojunctions; semiconductor thin films; CdxHg1-xTe thin films; CdHgTe; GaAs-AlGaAs; GaAs/AlxGa1-xAs heterostructures; Hall conductivity; Shubnikov-de Haas effect; carrier mobility; contactless microwave method; cyclotron resonance effects; low-dimensional semiconductor systems; magnetic field dependence; reflection coefficient; relaxation time; semiconductor 2D systems; semiconductor two-dimensional systems; transport parameters; Cyclotrons; Gallium arsenide; Magnetic field measurement; Magnetic resonance; Mercury (metals); Microwave measurements; Microwave theory and techniques; Semiconductor thin films; Tellurium; Time measurement;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
Print_ISBN :
0-7803-7361-8
DOI :
10.1109/APEIE.2002.1075780
