• DocumentCode
    2518952
  • Title

    Role of the additive of oxygen at plasma etching of silicon

  • Author

    Bogomolov, B.K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2002
  • fDate
    23-26 Sept. 2002
  • Firstpage
    33
  • Lastpage
    35
  • Abstract
    Research concerning the process of plasma etching of silicon in a CF2Cl2/O2 plasma using "Plasma-600" equipment is carried out. The shift of the maximum dependence of etching rate in the direction of greater O2 content in an initial mix for a CF2Cl2/O2 chemistry in comparison with CF4/O2 and SF6/O2 plasmas.
  • Keywords
    elemental semiconductors; oxygen; silicon; sputter etching; CF2Cl2/O2 plasma; O2; O2 content; Plasma-600 equipment; Si; etching rate; plasma etching process; Additives; Atomic layer deposition; Atomic measurements; Chemical technology; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 2002. APEIE 2002. 2002 6th International Conference on Actual Problems of
  • Print_ISBN
    0-7803-7361-8
  • Type

    conf

  • DOI
    10.1109/APEIE.2002.1075781
  • Filename
    1075781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2518952