• DocumentCode
    2519036
  • Title

    Measurement of Temperature Distribution in SnAg3.5 Flip-Chip Solder Joints during Current Stressing Using Infrared Microscopy

  • Author

    Hsiao, Hsiang-Yao ; Chen, Chih

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2008
  • fDate
    9-12 Dec. 2008
  • Firstpage
    639
  • Lastpage
    643
  • Abstract
    Several simulation studies reported that a hot spot exists in flip-chip solder bumps under accelerated electromigration. Yet, there are no experimental data to verify it. In this paper, the temperature distribution during electromigration in flip-chip SnAg3.5 solder bumps is directly inspected using infrared microscopy. Two clear hot spots are observed in the bump. One is located at the region with peak current density, and the other one is at the bump edge under the current-feeding metallization on the chip side. Under a current stress of 1.06 times 104 A/cm2, the temperature in the two hot spots is 161.7degC and 167.8degC respectively, which surpass the average bump temperature of 150.5degC. In addition, effect of under-bump-metallization (UBM) thickness on the hot spots is also examined. It indicates that the hot-spot temperature in the solder bump increases for the solder joints with a thinner UBM. Electromigration test indicates that these hot spots have significant influence on the initial failure location.
  • Keywords
    electromigration; flip-chip devices; integrated circuit metallisation; silver alloys; solders; tin alloys; SnAg; SnAg3.5 flip-chip solder joints; accelerated electromigration; current stressing; hot spots; infrared microscopy; temperature distribution; under-bump-metallization thickness; Acceleration; Current density; Current measurement; Electromigration; Flip chip solder joints; Metallization; Microscopy; Stress measurement; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2117-6
  • Electronic_ISBN
    978-1-4244-2118-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2008.4763505
  • Filename
    4763505