• DocumentCode
    2519056
  • Title

    The design and evaluation of dual-junction GaInP2/GaAs solar cells for space applications

  • Author

    Cavicchi, B.T. ; Krut, D.D. ; Lillington, D.R. ; Kurtz, S.R. ; Olson, J.M.

  • Author_Institution
    Spectrolab Inc., Sylmar, CA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    63
  • Abstract
    The necessary design considerations for a space-qualified GaInP 2/GaAs cell are addressed. Analyses are presented which indicate that, with the proper active layer thicknesses and doping levels, BOL efficiencies of 27% (AM0, 28 C) can be achieved from a cell with 84% remaining power at EOL ( 1×1015 e/cm2 ). Experimental data from 1 MeV electron irradiation of terrestrial GaInP2/GaAs tandem cells which are in support of these predictions are presented. The results indicate that the thin GaInP2 top cell degrades less than 10% and that the GaAs behaves as predicted
  • Keywords
    III-V semiconductors; electron beam effects; gallium arsenide; gallium compounds; solar cells; 27 percent; GaInP-GaAs solar cell; active layer thicknesses; beginning of life; doping levels; duel-junction solar cell; electron irradiation; space applications; terrestrial tandem cells; Degradation; Doping; Gallium arsenide; Inductors; Lattices; MOCVD; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169183
  • Filename
    169183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2519056