Title :
Study of integrator performance based on hybrid SETMOS
Author :
Cai, Li ; Kang, Qiang ; Shi, Dang-Yuan
Author_Institution :
Dept. of Electron. Sci., Air Force Eng. Univ. of CPLA, X´´ian, China
Abstract :
With the integration of integrated circuits continues to rise, the feature size of integrated devices has entered nanometer. Single electron transistor (SET) is satisfied as nanoelectronic devices, and the SET will be mixed with the composition of nano-MOS devices (SETMOS), is one of the hot current study. SETMOS as a new hybrid device combine the advantages of both, it also has the same Coulomb oscillation characteristics with the SET and MOS high gain. Integrated analog signal processing filters as the basic unit circuit, it must conform to the development of the times. Based on the I-V characteristics of a SETMOS hybrid device model, a SETMOS integrator is designed, and expounding it´s the operating condition, structure, performance, parameter and characteristics. The transmission performance of the integrator designed is simulated by SPICE. The conclusion is proved by simulation result.
Keywords :
MOS analogue integrated circuits; filters; nanoelectronics; single electron transistors; Coulomb oscillation characteristics; SETMOS hybrid device model; SPICE; basic unit circuit; integrated analog signal processing filters; integrated circuits; integrator performance; nanoMOS devices; nanoelectronic devices; single electron transistor; Analytical models; Equations; Integrated circuit modeling; MOSFET circuits; Mathematical model; Nanoscale devices; Integrator; SETMOS; SPICE; Single Electron Transistor (SET); Transmission Performance;
Conference_Titel :
Control and Decision Conference (CCDC), 2011 Chinese
Conference_Location :
Mianyang
Print_ISBN :
978-1-4244-8737-0
DOI :
10.1109/CCDC.2011.5968622
