Title :
Design aspects of MOS controlled thyristor elements
Author :
Bauer, F. ; Roggwiler, P. ; Aemmer, A. ; Fichtner, W. ; Vuilleumier, R. ; Moret, J.
Author_Institution :
ABB Corp. Res. Center, Baden, Switzerland
Abstract :
The authors have fabricated 2.5-kV thyristor devices with integrated MOS controlled n/sup +/ emitter shorts and a bipolar turn-on gate using a p-channel MOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 mu m were implemented in one- and two-dimensional arrays with up to 20000 units. The impact of the cell pitch on the turn-off performance and the on-state voltage was studied for arrays with constant cathode area as well as for single-cell structures. By realizing MOS components with submicron channel lengths, scaled single cells are shown to turn off with current densities of several thousands of amperes per square centimeter at a gate bias of 5 V. Critical process parameters as well as the device behavior were optimized through multidimensional simulation studies.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor technology; thyristors; 15 to 30 micron; 1D array; 2.5 kV; 2D array; 5 V; MCT; MOS controlled thyristor elements; bipolar turn-on gate; cathode area; cell pitch; current densities; design aspects; device behavior; gate bias; integrated MOS controlled n/sup +/ emitter shorts; multidimensional simulation studies; on-state voltage; p-channel MOS technology; pitch variations; process optimisation; process parameters; scaled single cells; single-cell structures; square cell geometry; submicron channel lengths; turn-off performance; two-dimensional arrays; Analytical models; Cathodes; Circuit simulation; Current density; Geometry; Impedance; Insulated gate bipolar transistors; MOSFETs; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74283
