Dual band monolithic AGC amplifier for space applications based on a commercial 0.2 μm PHEMT technology

Author

Sotero, Sonia ; Herrera, Amparo ; Cabo, Javier

Author_Institution

Dpto. Ing. de Comunicaciones, Cantabria Univ., Santander, Spain

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

9

Abstract

This paper reports the design and measurement of a dual band monolithic AGC amplifier to be used in transmit/receive modules for Telemetry, Tracking and Control (TTC) of satellite systems. The amplifier is also included in a multifunction Monolithic Microwave Integrated Circuit, MMIC, containing frequency converters. The block diagram of this chip is shown. The goal of the work is to reduce the number, size, and consequently, the cost of the circuitry actually in use, whilst maintaining performance, through the use of mature GaAs PHEMT technology. Issues such as circuit topologies, dc power consumption, circuit area minimization and optimization are all important factors that are addressed during the design.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; automatic gain control; gallium arsenide; satellite communication; transceivers; DC power consumption; GaAs; MMIC amplifier; circuit area minimization; circuit topologies; commercial PHEMT technology; dual band monolithic AGC amplifier; frequency converters; group delay degradation; satellite systems; transmit-receive modules; Control systems; Dual band; Integrated circuit measurements; Integrated circuit technology; MMICs; PHEMTs; Satellites; Semiconductor device measurement; Space technology; Telemetry;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262205

Filename

1262205