Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system

Author

Shinohe, Takashi ; Nakagawa, Akio ; Minami, Yoshihiro ; Atsuta, Masaki ; Kamei, Yoshio ; Ohashi, Hiromichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

301

Lastpage

304

Abstract

A novel MOS assisted gate-triggered thyristor (MAGT) having high di/dt turn-on characteristics is proposed. It is shown that 40 kA/cm/sup 2// mu s of di/dt can be attained for a turn-on from 1500-V anode voltage, 9090-A/cm/sup 2/ peak anode current, and 0.7- mu s pulse width, with an extremely low turn-on power loss. The transient anode voltage, caused by high di/dt, is less than 100 V, even in the case of 9090 A/cm/sup 2/ for the anode current density. It is concluded that MAGT is a very promising device to replace thyratrons in a high-repetition excimer laser system.<>

Keywords

insulated gate field effect transistors; thyristors; 0.7 mus; 1.5 kV; 2.5 kV; MAGT; MAGTs; MOS assisted gate-triggered thyristors; anode current density; anode voltage; high di/dt turn-on characteristics; high repetition excimer laser system; low turn-on power loss; peak anode current; pulse width; transient anode voltage; Anodes; Electrodes; Insulated gate bipolar transistors; Optical pulse generation; Optical pulses; Power lasers; Semiconductor lasers; Thyratrons; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74284

Filename

74284