Title :
Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system
Author :
Shinohe, Takashi ; Nakagawa, Akio ; Minami, Yoshihiro ; Atsuta, Masaki ; Kamei, Yoshio ; Ohashi, Hiromichi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel MOS assisted gate-triggered thyristor (MAGT) having high di/dt turn-on characteristics is proposed. It is shown that 40 kA/cm/sup 2// mu s of di/dt can be attained for a turn-on from 1500-V anode voltage, 9090-A/cm/sup 2/ peak anode current, and 0.7- mu s pulse width, with an extremely low turn-on power loss. The transient anode voltage, caused by high di/dt, is less than 100 V, even in the case of 9090 A/cm/sup 2/ for the anode current density. It is concluded that MAGT is a very promising device to replace thyratrons in a high-repetition excimer laser system.<>
Keywords :
insulated gate field effect transistors; thyristors; 0.7 mus; 1.5 kV; 2.5 kV; MAGT; MAGTs; MOS assisted gate-triggered thyristors; anode current density; anode voltage; high di/dt turn-on characteristics; high repetition excimer laser system; low turn-on power loss; peak anode current; pulse width; transient anode voltage; Anodes; Electrodes; Insulated gate bipolar transistors; Optical pulse generation; Optical pulses; Power lasers; Semiconductor lasers; Thyratrons; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74284
