• DocumentCode
    2519338
  • Title

    Device line characterization of Gunn diodes using six-port techniques

  • Author

    Ghannouchi, F.M. ; Bosisio, Renato G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
  • fYear
    1993
  • fDate
    18-20 May 1993
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    A device line characterization system using a six-port reflectometer with a built-in impedance tuner is reported. Device line measurements on a Gunn diode mounted in a coaxial fixture were performed at the Ka-band to optimize experimentally the output microwave power in the oscillation mode. In addition to its relatively low cost, an inherent advantage of the instrumentation used is that the large-signal reflection coefficient of negative resistance devices can be measured at the actual power level that exists in practice
  • Keywords
    Gunn diodes; microwave reflectometry; semiconductor device testing; Gunn diodes; Ka-band; built-in impedance tuner; coaxial fixture; cost; device line characterization; large-signal reflection coefficient; negative resistance devices; oscillation mode; output microwave power; six-port reflectometer; Coaxial components; Diodes; Electrical resistance measurement; Fixtures; Gunn devices; Impedance; Microwave measurements; Performance evaluation; Power measurement; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Instrumentation and Measurement Technology Conference, 1993. IMTC/93. Conference Record., IEEE
  • Conference_Location
    Irvine, CA
  • Print_ISBN
    0-7803-1229-5
  • Type

    conf

  • DOI
    10.1109/IMTC.1993.382627
  • Filename
    382627