Title :
Class-D power amplifiers using LDMOS and GaN power devices: a comparative analysis
Author :
Chevaux, Nicolas ; De Souza, Maria Merlyne
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
This paper provides new analytical expressions for the prediction of efficiency and power added efficiency in current mode class-D (CMCD) power amplifiers (PAs). Derived from a switch-based model which includes 9 parasitic elements, these expressions are then used to compare two device technologies in silicon and GaN in a 60W, 2.5GHz CMCD PA. This study reveals that the knee voltage and the drain and source resistances are mainly responsible for the lower PAE of the LDMOS device in comparison to GaN.
Keywords :
MIS devices; UHF power amplifiers; current-mode circuits; gallium compounds; CMCD power amplifiers; GaN; GaN power devices; LDMOS device; PAE; current mode class-D power amplifiers; drain resitance; frequency 2.5 GHz; knee voltage; power 60 W; power added efficiency; source resistance; Base stations; Circuit topology; Frequency; Gallium nitride; Operational amplifiers; Parasitic capacitance; Power amplifiers; Shape; Silicon; Voltage;
Conference_Titel :
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location :
Valletta
Print_ISBN :
978-1-4244-5793-9
DOI :
10.1109/MELCON.2010.5475994
