DocumentCode :
2519468
Title :
Nanostructured materials for sensing and imaging
Author :
Zhang, D.H. ; Yan, C.C. ; Chen, X.Z. ; Jin, Y.J. ; Li, D.D. ; Bian, H.J. ; Xu, Z.J. ; Wang, Y.K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
fDate :
3-6 Dec. 2010
Firstpage :
1
Lastpage :
6
Abstract :
From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the narrow bandgap InSb materials makes it possible for wide band infrared absorption covering mid and long wavelength infrared range. With the nanostructured materials made of metal and dielectric composites, visible light can be manipulated, which has potential application for super resolution imaging beyond diffraction limit.
Keywords :
III-V semiconductors; arsenic compounds; dielectric materials; energy gap; gallium arsenide; indium compounds; infrared detectors; infrared imaging; infrared spectra; metamaterials; nanocomposites; nanophotonics; nanosensors; nanostructured materials; optical materials; optical sensors; photodetectors; semiconductor quantum wells; silicon; GaAs:Si-GaAs-In0.3Ga0.7As0.93N0.01-Si-GaAs-GaAs:Si-GaAs; dielectric composites; imaging; infrared photodetection; metal composites; metamaterials; nanostructured materials; photocurrent; semiconductor quantum well structures; sensing; super resolution imaging; wide band infrared absorption; Absorption; Gallium arsenide; Metamaterials; Nitrogen; Photoconductivity; Silver; imaging; infrared photodetector; nanostructure; sensing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
Type :
conf
DOI :
10.1109/AOM.2010.5713576
Filename :
5713576
Link To Document :
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