Title :
A new band-to-band tunneling model for accurate device simulations of Si MOSFETs
Author :
Takayanagi, M. ; Iwabuchi, S. ; Kobori, T. ; Wada, T.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The authors propose a novel model for band-to-band tunneling caused by a nonuniform electric field, which is expressed in terms of the local field and its spatial variation rate and gives tunneling probabilities in magnitude and electric field dependence that are different from those given by conventional models. The proposed model can be incorporated into device simulators, and the results show the reasonable coincidence with experimental findings without any fitting parameter.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; MOSFETs; Si; accurate device simulations; band-to-band tunneling model; electric field dependence; experimental findings; incorporated into device simulators; local field; nonuniform electric field; spatial variation rate; tunneling probabilities; Electrostatics; Impurities; Leakage current; MOSFETs; Nonuniform electric fields; Probability; Tunneling; Ultra large scale integration; Voltage; Yield estimation;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74286
