Title :
Broadband and quasi-omnidirectional antireflection Si subwavelength structure based on alumina nano-template directly formed on SiO2/Si
Author :
Zhang, R. ; Zhao, C. ; Shao, B. ; Dong, J. ; Zhang, J. ; Yang, H.
Author_Institution :
Div. of Nano-device & Related Mater., Chinese Acad. of Sci., Suzhou, China
Abstract :
Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200-300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed over broadband (350-1200nm) at broad view (0°-45°). Such surface should improve the performance of solar cells and detectors. The fabrication technique can be widely employed to other heterogeneous substrate and achieve SWS functional surface.
Keywords :
alumina; antireflection coatings; elemental semiconductors; photodetectors; polishing; porous materials; reflectivity; silicon; silicon compounds; solar cells; sputter etching; Al2O3-SiO2-Si; broadband antireflection subwavelength structure; detectors; induced coupled plasma etching; ion beam etching; nanotemplate; polishing; quasiomnidirectional antireflection subwavelength structure; reflectivity; size 200 nm to 300 nm; solar cells; wafer-scaled cost-effective technique; wavelength 350 nm to 1200 nm; Broadband communication; Etching; Fabrication; Optical surface waves; Reflectivity; Silicon; Anodic porous alumina; Subwavelength structure; broadband and omnidirectional antireflection;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713597
