Electron viscosity effects on electron drift velocity in silicon MOS inversion layers

Electron drift mobility in MOS inversion layers was analyzed by the classical kinetic theory of gases. Drift velocity profiles for electrons perpendicular to the MOS interface were calculated by solving the transport equation for electrons with shear stresses due to the viscosity. The reason for the reduction in drift velocity by gate voltage is attributed to the change in electron mean-free-path near MOS interfaces caused by electron accumulation. Estimated scattering radii for electrons at various substrate temperatures are consistent with those predicted in plasma physics.<>