DocumentCode :
2519976
Title :
A 5v/3.3v-compatible Flash E2PROM Cell With A 400ns/70μm Programming Time For Embedded Memory Applications
Author :
Houdt, J. Van ; Wellekens, D. ; Haspeslagh, L. ; Deferm, L. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC
fYear :
1993
fDate :
22-24 Jun 1993
Firstpage :
54
Lastpage :
57
Keywords :
CMOS process; Charge transfer; Dielectrics; Electrons; Equivalent circuits; Functional programming; Nonvolatile memory; PROM; Predictive models; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonvolatile Memory Technology Review, 1993
Print_ISBN :
0-7803-1290-2
Type :
conf
DOI :
10.1109/NVMT.1993.696951
Filename :
696951
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2519976
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