Miniaturized differential filters for C- and Ku-band applications

Author

Entesari, Kamran ; Vaha-Heikkila, Tauno ; Rebeiz, Gabriel M.

Author_Institution

Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

227

Abstract

We have developed a new set of differential filters suitable for C and Ku-band applications. The filters are integrated on 500 μm-thick high-resistivity silicon substrates which are compatible with the new SiGe processes. A lumped-element approach is used to result in a very small size, and high-Q metal-air-metal (MAM) capacitors are integrated in the filter structure for a low-loss design. The measured insertion loss of differential 6 GHz and 12 GHz 10% bandwidth 2-pole Chebyshev filters with an area of 2.3×1.5 mm² and 1.8×1.1 mm² is -3.6 dB and -4 dB, respectively. An image rejection filter at 6 GHz resulted in an image rejection of 20 dB and an insertion loss of -3.6 dB. These filters are ideal for integration in modern-day SiGe and CMOS transceivers for wireless LAN and satellite communications.

Keywords

Chebyshev filters; MIM devices; Q-factor; band-pass filters; capacitors; microstrip filters; resonator filters; 1.1 mm; 1.5 mm; 1.8 mm; 12 GHz; 2.3 mm; 3.6 dB; 4 dB; 500 micron; 6 GHz; CMOS transceivers; Chebyshev filters; RF bandpass filters; SiGe processes; differential filters; high-Q MAM capacitors; high-resistivity silicon substrates; image rejection filter; lumped-element method; metal-air-metal capacitors; microstrip filters; resonator filters; satellite communications; wireless LAN; Area measurement; Bandwidth; Capacitors; Chebyshev approximation; Filters; Germanium silicon alloys; Insertion loss; Loss measurement; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262259

Filename

1262259