Extraction of gate oxide quality and its correlation to the electrical parameters of MOS devices

Author

Ortega, R. ; Molina, J. ; Torres, A. ; Landa, M. ; Alarcon, P. ; Escobar, M.

Author_Institution

Electron. Dept., Microelectron. Group, Nac. de Astrofis., Opt. y Electron. (INAOE), Tonantzintla, Mexico

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Physical, chemical and electrical measurements are a useful tool to determine some of the most important parameters in MOS devices. Electrical and structural properties of MOS devices can be obtained from these measurements. Main chemical bonds and thickness of gate oxide, threshold voltage, flatband voltage, series resistance and channel length for MOS devices are some of the parameters that can be obtained by these measurements. MOS capacitors and MOSFET devices with a CMOS standard fabrication process in INAOE were measured. Stress voltage was applied in MOS devices to extract lifetime characteristics and therefore, their reliability. The results showed to have a high correlation with manufacturing specifications.

Keywords

CMOS integrated circuits; MOS capacitors; MOSFET; integrated circuit reliability; measurement systems; CMOS standard fabrication process; INAOE; MOS capacitors; MOSFET devices; channel length; chemical bonds; chemical measurements; electrical measurements; electrical parameters; flatband voltage; gate oxide quality extraction; manufacturing specifications; physical measurements; series resistance; stress voltage; structural properties; threshold voltage; Electric variables measurement; Logic gates; MOSFET circuits; Optical refraction; Optical variables measurement; Reliability; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713676

Filename

5713676