DocumentCode
2520111
Title
The Superior Drop Test Performance of SAC-Ti Solders and Its Mechanism
Author
Liu, Weiping ; Bachorik, Paul ; Lee, Ning-Cheng
Author_Institution
Indium Corp. of America, Utica, NY, USA
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
1046
Lastpage
1053
Abstract
SAC-Ti alloys exhibited significantly improved drop test performance over not only SAC alloys, but also 63Sn37Pb for ENIG/OSP, NiAu/OSP, and OSP/OSP surface finish systems. The superior performance is attributed to (1) the increased grain size and dendrite size, therefore reduced hardness of solder, (2) inclusion of Ti in the IMC layer, and (3) reduced IMC layer thickness. DSC data indicate that the melting temperature and range were not affected by Ti, but the undercooling was almost completely suppressed. The creep properties of SAC-Ti alloy were comparable with those of SAC alloy, strongly suggesting the gain in drop test performance was not achieved by compromising the thermal fatigue performance. SAC-Mn alloys were also found to outperform SAC alloys and Sn63 for the X/OSP finish combinations studied. In general, SAC-Ti performed equally to or better than SAC-Mn alloys.
Keywords
ball grid arrays; copper alloys; creep; dendrites; dendritic structure; differential scanning calorimetry; gold; gold alloys; grain size; hardness; materials testing; mechanical testing; melting; nickel; nickel alloys; silver alloys; solders; thermal stress cracking; tin alloys; titanium alloys; undercooling; BGA system; DSC; ENIG-OSP surface finish; IMC layer; NiAu-OSP surface finish; SAC-Ti solder; SnAgCuTi-Ni-Au; SnAgCuTi-NiAu; creep; dendrite size; drop test; grain size; hardness; melting temperature; thermal fatigue; undercooling; Assembly; Environmentally friendly manufacturing techniques; Fatigue; Indium; Lead; Soldering; Steel; Surface finishing; System testing; Titanium alloys; SAC; Solder; drop test; fragility; lead-free; tin-silver-copper;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763568
Filename
4763568
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