• DocumentCode
    2520260
  • Title

    Physical noise modelling of majority-carrier devices: an adjoint-network approach

  • Author

    Ghione, G. ; Bellotti, E. ; Filicori, Fabio

  • Author_Institution
    Dipartimento di Elettronica, Politecnico di Milano, Italy
  • fYear
    1989
  • fDate
    3-6 Dec. 1989
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFETs.<>
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs; GaAs MESFETs; adjoint problem; adjoint-network approach; computing device sensitivities; impedance-field method; majority-carrier devices; monopolar devices; physical noise modeling; semiconductors; two-dimensional technique; Computer networks; Electrodes; Fluctuations; Gallium arsenide; Green´s function methods; Impedance; MESFETs; Microscopy; Noise figure; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1989.74290
  • Filename
    74290