DocumentCode :
2520260
Title :
Physical noise modelling of majority-carrier devices: an adjoint-network approach
Author :
Ghione, G. ; Bellotti, E. ; Filicori, Fabio
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Italy
fYear :
1989
fDate :
3-6 Dec. 1989
Firstpage :
327
Lastpage :
330
Abstract :
A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFETs.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs; GaAs MESFETs; adjoint problem; adjoint-network approach; computing device sensitivities; impedance-field method; majority-carrier devices; monopolar devices; physical noise modeling; semiconductors; two-dimensional technique; Computer networks; Electrodes; Fluctuations; Gallium arsenide; Green´s function methods; Impedance; MESFETs; Microscopy; Noise figure; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1989.74290
Filename :
74290
Link To Document :
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