Title :
A study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La2O3 as gate insulator
Author :
Chen, Gang ; Lai, P.T. ; Yu, Jerry
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
A new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor.
Keywords :
MIS devices; Schottky diodes; gas sensors; hydrogen; lanthanum compounds; H; La2O3; gate insulator; hydrogen adsorption activation energy; hydrogen reaction kinetic; hydrogen sensor; metal insulator silicon Schottky diode hydrogen sensor; temperature 150 degC; time 4.5 s; Logic gates; Microstructure; Nitrogen; Schottky diodes; Sputtering; Temperature distribution; Thermostats; Schottky diode; hydrogen sensor; silicon;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713689
