A Simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

Author

Kang, Myounggon ; Hahn, Wookghee ; Park, Han, II ; Lee, Hocheol ; Park, Juyoung ; Song, Youngsun ; Eun, Changgyu ; Ju, Sanghyun ; Choi, Kihwan ; Lim, Youngho ; Lee, Jong-Ho ; Park, Byung-Gook ; Shin, Hyungcheol

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit simulations. Moreover, it is very useful in developing the ultra-short channel devices for high density multi-level cell (MLC) NAND flash technologies.

Keywords

NAND circuits; SPICE; flash memories; hot carriers; integrated circuit modelling; HCI model; MLC NAND flash technology; NAND flash memory device; SPICE-friendly hot carrier injection model; circuit simulations; high density multilevel cell NAND flash technology; hot carrier injection phenomenon; scaled NAND flash memory array; simple compact model; size 32 nm; ultra-short channel devices; Computational modeling; Logic gates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713695

Filename

5713695