The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Author

Zhang, Lining ; Chan, Mansun ; He, Frank

Author_Institution

Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Impacts of parameter variations on the performance of double-gate (DG) tunneling FET (TFET) and conventional DG MOSFET are investigated by TCAD simulations. The different operation mechanisms determined their sensitivities to parameter variations. Variations in channel doping concentrations, gate oxide thickness, silicon film thickness and offset of gate electrode are studied in this work. It is found that though TFET overcomes the minimum subthreshold swing (SS) limit in conventional MOSFET, it is more sensitive to parameter variation, especially to gate oxide and silicon film thickness.

Keywords

MOSFET; semiconductor doping; technology CAD (electronics); TCAD simulation; channel doping concentration; device parameter variation; double gate MOSFET; double gate tunneling FET; gate electrode; gate oxide thickness; silicon film thickness; Doping; Electrodes; Films; Logic gates; MOSFET circuits; Silicon; Tunneling; Tunneling FET; band to band tunneling; double gate (DG); variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713698

Filename

5713698