Title :
The impact of device parameter variation on double gate tunneling FET and double gate MOSFET
Author :
Zhang, Lining ; Chan, Mansun ; He, Frank
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Impacts of parameter variations on the performance of double-gate (DG) tunneling FET (TFET) and conventional DG MOSFET are investigated by TCAD simulations. The different operation mechanisms determined their sensitivities to parameter variations. Variations in channel doping concentrations, gate oxide thickness, silicon film thickness and offset of gate electrode are studied in this work. It is found that though TFET overcomes the minimum subthreshold swing (SS) limit in conventional MOSFET, it is more sensitive to parameter variation, especially to gate oxide and silicon film thickness.
Keywords :
MOSFET; semiconductor doping; technology CAD (electronics); TCAD simulation; channel doping concentration; device parameter variation; double gate MOSFET; double gate tunneling FET; gate electrode; gate oxide thickness; silicon film thickness; Doping; Electrodes; Films; Logic gates; MOSFET circuits; Silicon; Tunneling; Tunneling FET; band to band tunneling; double gate (DG); variation;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713698
