DocumentCode
2520503
Title
Modeling of flicker noise in n-channel FinFETs: Mobility fluctuations in the subthreshold region
Author
Pandit, Srabanti ; Syamal, Binit ; Sarkar, C.K.
Author_Institution
Electron. & Telecommun. Eng. Dept., Jadavpur Univ., Kolkata, India
fYear
2010
fDate
15-17 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
In this work, the flicker noise in n-channel FinFETs has been modeled. The model has been developed by considering both mobility and carrier number fluctuations in the weak, moderate and strong inversion regions of operation of FinFETs. It has been demonstrated that mobility fluctuations cannot be neglected in FinFETs under the weak inversion region of its operation. For validation purpose, the model results have been verified with experimental data. Good agreement between the model results and experimental data has been observed.
Keywords
MOSFET; semiconductor device noise; carrier number fluctuation; flicker noise modeling; mobility fluctuation; n-channel FinFET; subthreshold region; 1f noise; FinFETs; Fluctuations; Logic gates; Scattering; FinFET; flicker noise; mobility fluctuations; power spectral density;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-9997-7
Type
conf
DOI
10.1109/EDSSC.2010.5713699
Filename
5713699
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