Title :
A high breakdown voltage and low switching loss GaN schottky diode using CHF3 plasma treatment
Author :
Peng, Sheng-Wen ; Yang, Chih-Wei ; Cheng, Chao-Hung ; Lin, Che-Kai ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF4 and CHF3 treatment technology were proposed. The Schottky diode with 60sec CHF3 plasma treated exhibits a high breakdown voltage of -352V, and a low reverse leakage current of 10-7A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF3 plasma treated was promising in converter circuit applications.
Keywords :
Schottky diodes; convertors; epitaxial layers; fluorine compounds; leakage currents; plasma materials processing; power semiconductor devices; semiconductor device breakdown; AlGaN-GaN; CF4; CHF3; breakdown voltage; circular Schottky diodes; converter circuit applications; fluorine ions plasma treatment technology; low switching loss Schottky diode; reverse leakage current; standard epitaxial wafer; HEMTs; MOCVD; Plasma measurements; Rectifiers; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713710
