Title :
Single supply, high linearity, high efficient PHEMT power devices and amplifier for 2 GHz & 5 GHz WLAN applications
Author :
Park, Min ; Ahn, Hokyun ; Kang, Dong Min ; Ji, Honggu ; Mun, Jaekyoung ; Kim, Haecheon ; Cho, Kyoung Ik
Author_Institution :
Microwave Device Team, Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= -0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=0 V, GL,=14.5 dB, OIP3=37.5 dBm.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; UHF field effect transistors; UHF power amplifiers; cellular radio; current density; field effect MMIC; microwave field effect transistors; microwave power transistors; power HEMT; wireless LAN; 2 GHz; 5 GHz; DCS application; GSM application; PHEMT power amplifier MMIC; PHEMT power devices; WLAN applications; air-bridge metal interconnection; drain-source current density; extrinsic transconductance; high efficient devices; high linearity; high performance; quasi-enhanced power PHEMT technology; single supply; Current density; Gallium arsenide; High power amplifiers; Linearity; Low voltage; Microwave devices; PHEMTs; Power amplifiers; Power supplies; Wireless LAN;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262296
