• DocumentCode
    2520742
  • Title

    The effects of concentrated ultraviolet light of high-efficiency silicon solar cells

  • Author

    Ruby, Douglas S. ; Schubert, W. Kent

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    111
  • Abstract
    The performance of point contract and passivated emitter solar cells after exposure to UV light is compared. The effect of UV exposure on oxide-passivated silicon wafers is examined. It is found that current passivated emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of point contact concentrator cell performance shows a clear trend toward more stable cells
  • Keywords
    elemental semiconductors; radiation effects; silicon; solar cells; Si solar cells; UV exposure; concentrated sunlight; concentrated ultraviolet light; high-efficiency; passivated emitter; Crystallization; Laboratories; Passivation; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Stability; Surface cleaning; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169192
  • Filename
    169192